aow10n65/AOWF10N65 650v,10a n-channel mosfet general description product summary v ds i d (at v gs =10v) 10a r ds(on) (at v gs =10v) < 1 w 100% uis tested 100% r g tested symbol v ds the aow10n65/AOWF10N65 is fabricated using an advanced high voltage mosfet process that is design ed to deliver high levels of performance and robustnes s in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 750v@150 drain-source voltage 650 aow10n65 AOWF10N65 g d s top view to-262 bottom view g d s g d s top view to-262f bottom view g d s g d s aow10n65 AOWF10N65 v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. maximum junction-to-ambient a,d power dissipation b p d t c =25c thermal characteristics 300 -55 to 150 units c/w w i d avalanche current c 173 single plused avalanche energy g 347 3.4 repetitive avalanche energy c 10 6.2 10* a v 30 gate-source voltage t c =100c a 36 pulsed drain current c continuous drain current t c =25c maximum case-to-sink a maximum junction-to-case mj c/w c/w derate above 25 o c parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range 5 6.2* 0.5 w/ o c c mj v/ns c 2 0.5 65 -- 4.5 65 250 aow10n65 AOWF10N65 28 0.22 rev1: nov 2011 www.aosmd.com page 1 of 6
aow10n65 /AOWF10N65 symbol min typ max units 650 750 bv dss / ? tj 0.75 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3 4 4.5 v r ds(on) 0.77 1 w g fs 13 s v sd 0.73 v i s maximum body-diode continuous current 10 a i sm 36 a c iss 1095 1369 1645 pf c oss 80 118 154 pf c rss 6 10 14 pf r g 1.7 3.5 5.5 w q g 22 27.7 33 nc q gs 6 7.4 9 nc q gd 5.5 11.3 17 nc t d(on) 30 ns t r 61 ns t d(off) 74 ns t f 53 ns t 255 320 385 ns m a v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate voltage drain current id=250 a, vgs=0v bv dss maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =325v, i d =10a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =520v, i d =10a gate source charge gate drain charge switching parameters i dss zero gate voltage drain current v ds =650v, v gs =0v diode forward voltage v ds =5v i d =250 m a v ds =520v, t j =125c i s =1a,v gs =0v v ds =40v, i d =5a forward transconductance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time static drain-source on-resistance v gs =10v, i d =5a reverse transfer capacitance i =10a,di/dt=100a/ m s,v =100v v gs =0v, v ds =25v, f=1mhz t rr 255 320 385 ns q rr 4.8 6 7.2 c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =10a,di/dt=100a/ m s,v ds =100v body diode reverse recovery time i f =10a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air environment with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and is more u seful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c, ratings are based on low frequency and duty cycles to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =3.4a, v dd =150v, r g =25 ? , starting t j =25 c rev1: nov 2011 www.aosmd.com page 2 of 6
aow10n65/AOWF10N65 typical electrical and thermal characteristics 0 3 6 9 12 15 18 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 4 8 12 16 20 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =5a 2.2 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev1: nov 2011 www.aosmd.com page 3 of 6
aow10n65/AOWF10N65 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 35 40 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =520v i d =10a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aow10n65 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOWF10N65 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 1s 100 m s area for aow10n65 (note f) operating area for AOWF10N65 (note f) 0 2 4 6 8 10 12 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 11: current de-rating (note b) rev1: nov 2011 www.aosmd.com page 4 of 6
aow10n65/AOWF10N65 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for aow10n65 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for AOWF10N65 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =4.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev1: nov 2011 www.aosmd.com page 5 of 6
aow10n65/AOWF10N65 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev1: nov 2011 www.aosmd.com page 6 of 6
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